Epitaxial growth of (100)-oriented SmN directly on (100)Si substrates

Epitaxial growth of Cu ( 100 ) and Pt ( 100 ) thin films on perovskite substrates Andrew

Pulsed laser deposition (PLD) has been used to grow epitaxially oriented thin films of Cu and Pt on (100)-oriented substrates of both SrTiO3 and LaAlO3. The resulting films have been characterized for their crystalline orientations using x-ray diffraction (XRD) and for their surface morphologies using atomic force microscopy (AFM). The diffraction results illustrated that purely epitaxial Cu(10...

Epitaxial growth of Co3O3 on CoO(100)

Investigation of structural and electronic properties of epitaxial graphene on 3C–SiC(100)/Si(100) substrates

Graphene has been intensively studied in recent years in order to take advantage of its unique properties. Its synthesis on SiC substrates by solid-state graphitization appears a suitable option for graphene-based electronics. However, before developing devices based on epitaxial graphene, it is desirable to understand and finely control the synthesis of material with the most promising propert...

1 Epitaxial growth of Cu ( 100 ) and Pt ( 100 ) thin

Pulsed laser deposition (PLD) has been used to grow epitaxially oriented thin films of Cu and Pt on (100)-oriented substrates of both SrTiO3 and LaAlO3. The resulting films have been characterized for their crystalline orientations using x-ray diffraction (XRD) and for their surface morphologies using atomic force microscopy (AFM). The diffraction results illustrated that purely epitaxial Cu(10...

Growth of epitaxial iron disilicide on Si(100)

The growth of epltaxiai FeSi 2 on Si(100) substrate; under ultrahigh-vacuum conditions has been achteved using two different methods: molecular beam epitaxy and the "template layer" method. The siliclde layers have been characterized by surface sensmve techniques such as Auger electron spectroscopy, electron er~ergy loss spectroscopy, scanning tunneling microscopy and low energy electron diffra...